| PART |
Description |
Maker |
| MRFE6VP5600HR611 MRFE6VP5600HR5 |
RF Power Field Effect Transistors
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
|
Freescale Semiconductor, Inc
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| BC182B BC182 BC183 BC184 ON0140 |
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amplifier Transistors(NPN)
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| GS6333UR18D2 GS6333UR19D1 GS6333UR19D2 GS6333UR19D |
D-Subminiature Connector; Gender:Female; No. of Contacts:9; Contact Termination:Crimp; D Sub Shell Size:DB9; Body Material:Steel; Body Plating:Zinc; Contact Plating:Gold RoHS Compliant: Yes
CABLE ASSEMBLY; SMA MALE TO N FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; 12" CABLE LENGTH; 3引脚，低功率，P复位电路
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 16V; Case Size: 10x12.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 16V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 16V; Case Size: 18x35.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 16V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 1000uF; Voltage: 16V; Case Size: 12.5x25 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 16V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 16V; Case Size: 8x11.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 10V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 3300uF; Voltage: 10V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 4700uF; Voltage: 10V; Case Size: 18x35.5 mm; Packaging: Bulk
3 Pin, Low-Power, P Reset Circuits
IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3, SOT-23, 3 PIN, Power Management Circuit
|
VISHAY SEMICONDUCTORS
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BC547A BC817-16 MPS2907A BCW66G MMBT4403 MPSA56 |
Plastic-Encapsulated Multiple Transistors ?Quad Surface Mount (Case 751B-SO-16) ?NPN/PNP)
Plastic-Encapsulated Multiple Transistors ?Quad Surface Mount (Case 751B-SO-16) ?NPN/PNP)
|
Allied Components International
Allied Components Internati...
Allied Components Inter...
|
| LBE66B1 LBE66B1B LBE66B1CB LBE66B1U LBE66B2 LBE66B |
HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS
|
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| MJD200 MJD210 MJD200T4 MJD200-1 MJD210-1 MJD210T4 |
From old datasheet system
Complementary Plastic Power Transistors
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS 5 A, 25 V, PNP, Si, POWER TRANSISTOR
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
